Semiconductor

Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode :

Identify the logic operation performed by the given circuit.

The output of the given circuit diagram is -

A Zener diode of breakdown voltage \(10 \mathrm{~V}\) is used as a voltage regulator as shown in the figure. The current through the Zener diode is :

In the given circuit, the voltage across load resistance (R\(_L\)) is :

In the given circuit, the breakdown voltage of the Zener diode is \(3.0 \mathrm{~V}\). What is the value of \(\mathrm{I}_{\mathrm{z}}\) ?

The truth table for this given circuit is :

Which of the following circuits is reverse - biased?

The truth table of the given circuit diagram is :

In the given circuit if the power rating of Zener diode is $10 \mathrm{~mW}$, the value of series resistance $R_s$ to regulate the input unregulated supply is :

To measure the temperature coefficient of resistivity $\alpha$ of a semiconductor, an electrical arrangement shown in the figure is prepared. The arm BC is made up of the semiconductor. The experiment is being conducted at $25^{\circ} \math...

For the logic circuit shown, the output waveform at \(\mathrm{Y}\) is:

For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(\mathrm{V}_{\mathrm{CC}}=1 \mathrm{~V}, \mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega, \mathrm{R}_{\mathrm{b}}=100 ~\mathrm{k} \Omega\) and \(\beta=100\). Value of b...

The resistivity \((\rho)\) of semiconductor varies with temperature. Which of the following curve represents the correct behaviour :

Name the logic gate equivalent to the diagram attached

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R...

The effect of increase in temperature on the number of electrons in conduction band (\(\mathrm{n_e}\)) and resistance of a semiconductor will be as:

Given below are two statements :
Statement I: In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II: In a transistor, collector is the thickest and base is the thinnest segment.
In the l...

The output waveform of the given logical circuit for the following inputs A and B as shown below, is :

The output $Y$ for the inputs $A$ and $B$ of circuit is given by

Truth table of the shown circuit is:

Which one of the following statement is not correct in the case of light emitting diodes?
A. It is a heavily doped p-n junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The ene...

For the given logic gates combination, the correct truth table will be

Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at appl...

Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
Statement II : When such P-type and N-type s...

Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason R : The current in the...

The logic gate equivalent to the given circuit diagram is :

Match List I with List II:

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Choose the correct statement about Zener diode :

In the given circuit, the current (I) through the battery will be

From the given transfer characteristic of a transistor in \(\mathrm{CE}\) configuration, the value of power gain of this configuration is \(10^{x}\), for \(\mathrm{R}_{\mathrm{B}}=10 ~\mathrm{k} \Omega\), and $$\mathrm{R}_{\mathrm{C}}=1 ~\m...

For the following circuit and given inputs A and B, choose the correct option for output '\(Y\)'

The output from NAND gate having inputs A and B given below will be,

In an n-p-n common emitter (CE) transistor the collector current changes from 5 \(\mathrm{mA}\) to \(16 \mathrm{~mA}\) for the change in base current from \(100~ \mu \mathrm{A}\) and \(200 ~\mu \mathrm{A}\), respectively. The current gain o...

The logic performed by the circuit shown in figure is equivalent to :

The logic operations performed by the given digital circuit is equivalent to:

A zener diode of power rating 1.6 W is to be used as voltage regulator. If the zener diode has a breakdown of 8V and it has to regulate voltage fluctuating between 3 V and 10 V. The value of resistance Rs for safe operation of diode will be...

If each diode has a forward bias resistance of \(25 ~\Omega\) in the below circuit,

Which of the following options is correct :

The circuit diagram used to study the characteristic curve of a zener diode is connected to variable power supply (0 \(-\) 15 V) as shown in figure. A zener diode with maximum potential Vz = 10 V and maximum power dissipation of 0.4 W is co...

A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100 \(\mu\)A, it brings a change of 10 mA in collector current. If the load resistance is 2 k\(\Omega\) and input resistance is 1 k$$\Omega$...

A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 \(\times\) 105 ms\(-\)1. The speed with which electron enters the p side will be \({x \over 3} \times {10^5}\) ms...

If the potential barrier across a p-n junction is \(0.6 \mathrm{~V}\). Then the electric field intensity, in the depletion region having the width of \(6 \times 10^{-6} \mathrm{~m}\), will be __________ $$\times 10^{5} \mathrm{~N} / \mathrm...

A \(8 \mathrm{~V}\) Zener diode along with a series resistance \(\mathrm{R}\) is connected across a \(20 \mathrm{~V}\) supply (as shown in the figure). If the maximum Zener current is \(25 \mathrm{~mA}\), then the minimum value of R will be...

Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A : n-p-n transistor permits more current than a p-n-p transistor.
Reason R : Electrons have greater mobility as a charge carri...

For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :

In the following circuit, the correct relation between output (Y) and inputs A and B will be :

A zener of breakdown voltage Vz = 8 V and maximum zener current, IZM = 10 mA is subjectd to an input voltage Vi = 10 V with series resistance R = 100 \(\Omega\). In the given circuit RL represents the variable load resistance. The ratio of ...

In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p-n junction diode (D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode is correct?

Identify the solar cell characteristics from the following options :

An n.p.n transistor with current gain \(\beta=100\) in common emitter configuration is shown in figure. The output voltage of the amplifier will be

Identify the correct Logic Gate for the following output (Y) of two inputs A and B.