Semiconductor

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias
resistance is :

In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and
the output voltages will be:

An experiment is performed to determine the I - V characteristics of a Zener diode, which has a protective resistance of R = 100 \(\Omega\), and a maximum power of dissipation rating of 1 W. The minimum voltage range of the DC source in th...

The truth table given in fig. represents :

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An unknown transistor needs to be identified as a npn or pnp type. A multimeter, with + ve and − ve terminals, is used to measure resistance between different terminals of transistor. If terminal 2 is the base of the transistor then which o...

A realistic graph depicting the variation of the reciprocal of input resistance in an input characteristics measurement in a commonemitter
transistor configuration is :

The ratio (R) of output resistance r0, and the input resistance ri in measurements of input and output characteristics of a transistor is typically in the range:

To get an output of 1 from the circuit shown in figure the input must be :

Identify the semiconductor devices whose characteristics are given below, in the order \((a), (b), (c), (d)\) :

For a common emitter configuration, if \(\alpha\) and \(\beta\) have their usual meanings, the incorrect relationship between \(\alpha\) and \(\beta\) is :

The temperature dependence of resistance of \(Cu\) and undoped \(Si\) in the temperature range \(300-400\) \(K,\) is best described by :

If \(a, b, c, d\) are inputs to a gate and \(x\) is its output, then, as per the following time graph, the gate is :

A red \(LED\) emits light at \(0.1\) watt uniformly around it. The amplitude of the electric field of the light at a distance of \(1\) \(m\) from the diode is :

The current voltage relation of diode is given by \({\rm I} = \left( {{e^{100V/T}} - 1} \right)mA,\) where the applied voltage \(V\) is in volts and the temperature \(T\) is in degree kelvin. If a student makes an error measuring $$ \pm 0.0...

The forward biased diode connection is:

A diode detector is used to detect an amplitude modulated wave of \(60\%\) modulation by using a condenser of capacity \(250\) picofarad in parallel with a load resistance \(100\) kilo \(ohm.\) Find the maximum modulated frequency which co...

The \({\rm I}\)-\(V\) characteristic of an \(LED\) is

Truth table for system of four \(NAND\) gates as shown in figure is:

The combination of gates shown below yields

A \(p\)-\(n\) junction \((D)\) shown in the figure can act as a rectifier. An alternating current source \((V)\) is connected in the circuit.

The current \((I)\) in the resistor \((R)\) can be shown by :

The logic circuit shown below has the input waveforms \('A'\) and \('B'\) as shown. Pick out the correct output waveform.


Output is

In the circuit below, \(A\) and \(B\) represent two inputs and \(C\) represents the output.

The circuit represents

A working transistor with its three legs marked \(P,Q\) and \(R\) is tested using a multi-meter. No conduction is found between \(P\) and \(Q\). By connecting the common (negative) terminal of the multi-meter to \(R\) and the other (positiv...

Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate ?

If in a \(p\)-\(n\) junction diode, a square input signal of \(10\) \(V\) is applied as shown

Then the output signal across \({R_L}\) will be

If the lattice constant of this semiconductor is decreased, then which of the following is correct?

In a common base mode of a transistor, the collector current is \(5.488\) \(mA\) for an emitter current of \(5.60mA.\) The value of the base current amplification factor \(\left( \beta \right)\) will be

A solid which is not transparent to visible light and whose conductivity increases with temperature is formed by

In the following, which one of the diodes is reverse biased?

If the ratio of the concentration of electrons to that of holes in a semiconductor is \({7 \over 5}\) and the ratio of currents is \({7 \over 4},\) then what is the ratio of their drift velocities?

The circuit has two oppositively connected ideal diodes in parallel. What is the current following in the circuit?

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than \(2480\) \(nm\) is incident on it. The band gap in \((eV)\) for the semiconductor is

In a common base amplifier, the phase difference between the input signal voltage and output voltage is

In a full wave rectifier circuit operating from \(50\) \(Hz\) mains frequency, the fundamental frequency in the ripple would be

When \(p\)-\(n\) junction diode is forward biased then

The manifestation of band structure in solids is due to

A piece of copper and another of germanium are cooled from room temperature to \(77K,\) the resistance of

For a transistor amplifier in common emitter configuration for load impedance of \(1k\,\Omega\) \(\left( {{h_{fe}} = 50} \right.\) and \(\left. {{h_{oe}} = 25} \right)\) the current gain is

When \(npn\) transistor is used as an amplifer

A strip of copper and another of germanium are cooled from room temperature to \(80K.\) The resistance of

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

In the middle of the depletion layer of a reverse- biased \(p\)-\(n\) junction, the

The energy band gap is maximum in

The part of a transistor which is most heavily doped to produce large number of majority carriers is

By increasing the temperature, the specific resistance of a conductor and a semiconductor

At absolute zero, Si acts as