Semiconductor PYQs - Last 5 Years

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Practice 117 JEE Main Physics questions from Semiconductor. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.

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Last 5 Years Semiconductor Questions

Showing 50 of 117 filtered questions.

1Electronic Devices

Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode :

2Electronic Devices

Identify the logic operation performed by the given circuit.

3Electronic Devices

The output of the given circuit diagram is -

4Electronic Devices

A Zener diode of breakdown voltage \(10 \mathrm{~V}\) is used as a voltage regulator as shown in the figure. The current through the Zener diode is :

5Electronic Devices

In the given circuit, the voltage across load resistance (R\(_L\)) is :

6Electronic Devices

In the given circuit, the breakdown voltage of the Zener diode is \(3.0 \mathrm{~V}\). What is the value of \(\mathrm{I}_{\mathrm{z}}\) ?

7Electronic Devices

The truth table for this given circuit is :

8Electronic Devices

Which of the following circuits is reverse - biased?

9Electronic Devices

The truth table of the given circuit diagram is :

10Electronic Devices

In the given circuit if the power rating of Zener diode is $10 \mathrm{~mW}$, the value of series resistance $R_s$ to regulate the input unregulated supply is :

11Electronic Devices

To measure the temperature coefficient of resistivity $\alpha$ of a semiconductor, an electrical arrangement shown in the figure is prepared. The arm BC is made up of the semiconductor. The experiment is being conducted at $25^{\circ} \math...

12Electronic Devices

For the logic circuit shown, the output waveform at \(\mathrm{Y}\) is:

13Electronic Devices

For a given transistor amplifier circuit in \(\mathrm{CE}\) configuration \(\mathrm{V}_{\mathrm{CC}}=1 \mathrm{~V}, \mathrm{R}_{\mathrm{C}}=1 ~\mathrm{k} \Omega, \mathrm{R}_{\mathrm{b}}=100 ~\mathrm{k} \Omega\) and \(\beta=100\). Value of b...

14Electronic Devices

The resistivity \((\rho)\) of semiconductor varies with temperature. Which of the following curve represents the correct behaviour :

15Electronic Devices

Name the logic gate equivalent to the diagram attached

16Electronic Devices

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R...

17Electronic Devices

The effect of increase in temperature on the number of electrons in conduction band (\(\mathrm{n_e}\)) and resistance of a semiconductor will be as:

18Electronic Devices

Given below are two statements :
Statement I: In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II: In a transistor, collector is the thickest and base is the thinnest segment.
In the l...

19Electronic Devices

The output waveform of the given logical circuit for the following inputs A and B as shown below, is :

20Electronic Devices

The output $Y$ for the inputs $A$ and $B$ of circuit is given by

Truth table of the shown circuit is:

21Electronic Devices

Which one of the following statement is not correct in the case of light emitting diodes?
A. It is a heavily doped p-n junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The ene...

22Electronic Devices

For the given logic gates combination, the correct truth table will be

23Electronic Devices

Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R : For a p-n junction diode, at appl...

24Electronic Devices

Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
Statement II : When such P-type and N-type s...

25Electronic Devices

Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason R : The current in the...

26Electronic Devices

The logic gate equivalent to the given circuit diagram is :

27Electronic Devices

Match List I with List II:

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28Electronic Devices

Choose the correct statement about Zener diode :

29Electronic Devices

In the given circuit, the current (I) through the battery will be

30Electronic Devices

From the given transfer characteristic of a transistor in \(\mathrm{CE}\) configuration, the value of power gain of this configuration is \(10^{x}\), for \(\mathrm{R}_{\mathrm{B}}=10 ~\mathrm{k} \Omega\), and $$\mathrm{R}_{\mathrm{C}}=1 ~\m...

INTEGER+4 / -12023

31Electronic Devices

For the following circuit and given inputs A and B, choose the correct option for output '\(Y\)'

32Electronic Devices

The output from NAND gate having inputs A and B given below will be,

33Electronic Devices

In an n-p-n common emitter (CE) transistor the collector current changes from 5 \(\mathrm{mA}\) to \(16 \mathrm{~mA}\) for the change in base current from \(100~ \mu \mathrm{A}\) and \(200 ~\mu \mathrm{A}\), respectively. The current gain o...

34Electronic Devices

The logic performed by the circuit shown in figure is equivalent to :

35Electronic Devices

The logic operations performed by the given digital circuit is equivalent to:

36Electronic Devices

A zener diode of power rating 1.6 W is to be used as voltage regulator. If the zener diode has a breakdown of 8V and it has to regulate voltage fluctuating between 3 V and 10 V. The value of resistance Rs for safe operation of diode will be...

37Electronic Devices

If each diode has a forward bias resistance of \(25 ~\Omega\) in the below circuit,

Which of the following options is correct :

38Electronic Devices

The circuit diagram used to study the characteristic curve of a zener diode is connected to variable power supply (0 \(-\) 15 V) as shown in figure. A zener diode with maximum potential Vz = 10 V and maximum power dissipation of 0.4 W is co...

INTEGER+4 / -12022

39Electronic Devices

A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100 \(\mu\)A, it brings a change of 10 mA in collector current. If the load resistance is 2 k\(\Omega\) and input resistance is 1 k$$\Omega$...

INTEGER+4 / -12022

40Electronic Devices

A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0 \(\times\) 105 ms\(-\)1. The speed with which electron enters the p side will be \({x \over 3} \times {10^5}\) ms...

INTEGER+4 / -12022

41Electronic Devices

If the potential barrier across a p-n junction is \(0.6 \mathrm{~V}\). Then the electric field intensity, in the depletion region having the width of \(6 \times 10^{-6} \mathrm{~m}\), will be __________ $$\times 10^{5} \mathrm{~N} / \mathrm...

INTEGER+4 / -12022

42Electronic Devices

A \(8 \mathrm{~V}\) Zener diode along with a series resistance \(\mathrm{R}\) is connected across a \(20 \mathrm{~V}\) supply (as shown in the figure). If the maximum Zener current is \(25 \mathrm{~mA}\), then the minimum value of R will be...

INTEGER+4 / -12022

43Electronic Devices

Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A : n-p-n transistor permits more current than a p-n-p transistor.
Reason R : Electrons have greater mobility as a charge carri...

44Electronic Devices

For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :

45Electronic Devices

In the following circuit, the correct relation between output (Y) and inputs A and B will be :

46Electronic Devices

A zener of breakdown voltage Vz = 8 V and maximum zener current, IZM = 10 mA is subjectd to an input voltage Vi = 10 V with series resistance R = 100 \(\Omega\). In the given circuit RL represents the variable load resistance. The ratio of ...

INTEGER+4 / -12022

47Electronic Devices

In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p-n junction diode (D1 or D2) is 0.6 V. Which of the following output voltage (V0) waveform across the diode is correct?

48Electronic Devices

Identify the solar cell characteristics from the following options :

49Electronic Devices

An n.p.n transistor with current gain \(\beta=100\) in common emitter configuration is shown in figure. The output voltage of the amplifier will be

50Electronic Devices

Identify the correct Logic Gate for the following output (Y) of two inputs A and B.