Semiconductor Devices and Logic Gates PYQs - Last 5 Years

MHT CET / Physics / Modern Physics / 177 recent questions

PhysicsModern Physics2022-2026

All Semiconductor Devices and Logic Gates PYQs Last 10 Years Create chapter test

Practice 177 MHT CET Physics questions from Semiconductor Devices and Logic Gates. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.

177

PYQs on Page

Physics / Modern Physics

2022-2026

Year Range

Based on indexed question metadata

177

Last 5 Years

2022-2026

177

Last 10 Years

2017-2026

Recent Year Trend

2022

2023

2024

2025

2026

202246 max PYQs/year2026

Question Types

177PYQs

MCQ100%

Difficulty Mix

#1 Unknown177

177 in last 5 years177 in last 10 years

Last 5 Years Semiconductor Devices and Logic Gates Questions

Showing 50 of 177 filtered questions.

1Semiconductor Devices And Logic Gates

Applying forward bias to p-n junction, the potential barrier

2Semiconductor Devices And Logic Gates

In a common emitter transistor amplifier circuit, the input resistance is $1.8 \mathrm{k} \Omega$ and output is obtained across a load resistance of $9 \mathrm{k} \Omega$. The alternating current gain is 70 . Corresponding to an a.c. input ...

3Semiconductor Devices And Logic Gates

If p-n junction diode is forward biased, then

4Semiconductor Devices And Logic Gates

In a certain 2 -inputs logic gate, when inputs $\mathrm{A}=0$ and $\mathrm{B}=0$, then output $\mathrm{C}=1$. And also when inputs $\mathrm{A}=0, \mathrm{~B}=1$, then again output $\mathrm{C}=1$. The gate must be

5Semiconductor Devices And Logic Gates

For a transistor, $\alpha_{\mathrm{dc}}$ and $\beta_{\mathrm{dc}}$ are the current ratios, then the value of $\frac{\beta_{\mathrm{dc}}-\alpha_{\mathrm{dc}}}{\alpha_{\mathrm{dc}} \times \beta_{\mathrm{dc}}}$

6Semiconductor Devices And Logic Gates

To get output of the following logic circuit as ' 0 ' (zero), the inputs $A, B, C$ should NOT be, respectively,

7Semiconductor Devices And Logic Gates

In which of the following figures, the p.n. junction diode is reverse biased?

8Semiconductor Devices And Logic Gates

The logic gate for which the output goes 'HIGH' or ' 1 ' only when an odd number of 'HIGH' or ' 1 ' are at its input, is

9Semiconductor Devices And Logic Gates

One of the following values of inputs $\mathrm{A}, \mathrm{B}$ and C respectively gives output $(\mathrm{Y})$ of the following combination of logic gates as ' 1 ' is

10Semiconductor Devices And Logic Gates

In a common emitter amplifier configuration, the current gain is 62 . The collector resistance and input resistance are $5 \mathrm{k} \Omega$ and $500 \Omega$ respectively. If the input voltage is 0.01 V , the output voltage will be

11Semiconductor Devices And Logic Gates

A piece of semiconductor is connected in series in an electric circuit. On increasing the temperature, the current in the circuit will

12Semiconductor Devices And Logic Gates

Which of the following statements is TRUE for n-type semiconductor?

13Semiconductor Devices And Logic Gates

In a common emitter transistor amplifier circuit, the current gain $\alpha=0.8$. If the base current changes by $3 \mu \mathrm{~A}$ then the collector current changes by

14Semiconductor Devices And Logic Gates

In the case of common emitter transistor amplifier, the ratio of collector current to emitter current is 0.96 , then the current gain $(\beta)$ of the amplifier is

15Semiconductor Devices And Logic Gates

$\mathrm{I}-\mathrm{V}$ characteristics of LED is shown correctly by graph

16Semiconductor Devices And Logic Gates

I - V characteristics of photodiode for different illumination intensities $\mathrm{I}_1, \mathrm{I}_2, \mathrm{I}_3$ and $\mathrm{I}_4$ are drawn as follows. Then the maximum intensity among them is

17Semiconductor Devices And Logic Gates

By increasing the temperature, the specific resistance of a conductor and a semiconductor respectively

18Semiconductor Devices And Logic Gates

If a centre tap transformer is used with two p-n junction diodes for full wave rectification then output voltage of rectifier with respect to each diode is (secondary voltage of transformer $=\mathrm{V}_{\mathrm{s}}$ )

19Semiconductor Devices And Logic Gates

In a pure silicon crystal electron-hole concentration is $10^{16}$ per $\mathrm{m}^3$ at 301 K . Now $10^{21}$ atoms of phosphorus are added per cubic metre. The new hole concentration in silicon is (in per $\mathrm{m}^3$ )

20Semiconductor Devices And Logic Gates

If an alternating voltage is applied across a p-n junction diode in series with a load then

21Semiconductor Devices And Logic Gates

In a common emitter transistor amplifier, the output voltage and input voltage have a phase difference of

22Semiconductor Devices And Logic Gates

The graph given below represents I-V characteristics of zener diode. The part of the characteristics curve that is most relevant for its operation as a voltage regulator is

23Semiconductor Devices And Logic Gates

In n-type semiconductor, free electrons donated by the impurity atoms occupy energy levels in

24Semiconductor Devices And Logic Gates

In the logic circuit given, $\mathrm{A}, \mathrm{B}$ and C are the inputs and Y is the output. The output Y is HIGH

25Semiconductor Devices And Logic Gates

Which graph shows correctly the temperature (T). dependence of resistivity $(\rho)$ of a semiconductor?

26Semiconductor Devices And Logic Gates

In an n-p-n transistor amplifier, the collector current is 8 mA . If $80 \%$ of the electrons from the emitter reach the collector, then ( $\alpha$ and $\beta$ are current ratios)

27Semiconductor Devices And Logic Gates

Which of the following logic gates is called as Universal gate?

28Semiconductor Devices And Logic Gates

In the following combination of logic gates, the output $Y$ can be written in the terms of inputs $A$ and B as

29Semiconductor Devices And Logic Gates

If the internal resistance of cell is negligible then current flowing through the circuit is

30Semiconductor Devices And Logic Gates

In common emitter mode of a transistor, the current gain is 8 . The input impedance is $25 \mathrm{k} \Omega$ and load resistance is $75 \mathrm{k} \Omega$. The power gain is

31Semiconductor Devices And Logic Gates

When an n-p-n junction transistor is used as an amplifier in common emitter mode,

32Semiconductor Devices And Logic Gates

For an ideal diode, in forward and reverse biased condition the resistance is respectively

33Semiconductor Devices And Logic Gates

In a transistor (common emitter configuration) the ratio of power gain to voltage gain is ( $\alpha$ and $\beta$ are current ratios)

34Semiconductor Devices And Logic Gates

The resultant logic gate from the combination of following gates is

35Semiconductor Devices And Logic Gates

In an n-p-n transistor amplifier, the collector current is 9 mA . If $90 \%$ of the electrons emitted reach the collector, then

36Semiconductor Devices And Logic Gates

In the following circuit shown in figure, three diodes are connected each with forward resistance $40 \Omega$ and infinite backward resistance. The current through $100 \Omega$ resistance is

37Semiconductor Devices And Logic Gates

In the depletion layer of reverse biased p-n junction, the

38Semiconductor Devices And Logic Gates

For a common emitter transistor, if $\frac{I_{\mathrm{C}}}{I_{\mathrm{E}}}=0.95$, then the current gain is

39Semiconductor Devices And Logic Gates

In the case of constant ' $\alpha$ ' and ' $\beta$ ' of a transistor ( $\alpha$ and $\beta$ are current ratios)

40Semiconductor Devices And Logic Gates

In unbiased p-n junction diode

41Semiconductor Devices And Logic Gates

In a given logic circuit, the output Y when all the three inputs $\mathrm{A}, \mathrm{B}, \mathrm{C}$ are first low and then high will be respectively

42Semiconductor Devices And Logic Gates

In a transistor amplifier, AC current gain is 64 , the load resistance is $5400 \Omega$ and the input resistance of the transistor is $540 \Omega$. The voltage gain is

43Semiconductor Devices And Logic Gates

For the diagram shown, the resistance between points A and B when the ideal diode ' $D$ ' is forward biased is ' $R_1$ ' and that when reverse biased is ' $R_2$ '. The ratio $\frac{R_1}{R_2}$ is

44Semiconductor Devices And Logic Gates

In the logic circuit diagram, when all the four inputs $\mathrm{A}, \mathrm{B}, \mathrm{C}, \mathrm{D}$ are one, the outputs $\mathrm{Y}_1, \mathrm{Y}_2, \mathrm{Y}_3$ are respectively $(1,1,0)$. When all the inputs $\mathrm{A}, \mathrm{B},...

45Semiconductor Devices And Logic Gates

The current amplification factor of a transistor is 50 . The input resistance when used in common emitter mode is $1 \mathrm{k} \Omega$. The peak value for an a.c. input voltage of 0.01 V peak is

46Semiconductor Devices And Logic Gates

The resultant gate and its Boolean expression in the given circuit is

47Semiconductor Devices And Logic Gates

In the working of photodiode, the reverse current depends on

48Semiconductor Devices And Logic Gates

A zener diode, having breakdown voltage 15 V is used in a voltage regulator circuit as shown. The current through the zener diode is

49Semiconductor Devices And Logic Gates

The collector supply voltage is 6 V and a voltage drop across a resistor of $600 \Omega$ in the collector circuit is 0.6 V , in a circuit of transistor connected in common emitter mode. If the current gain is 20 then the base current is

50Semiconductor Devices And Logic Gates

A semiconductor device X is connected in series with a battery and a resistor. The current of 10 mA is found to pass through the circuit. If the terminals of X are connected in reverse manner, the current drops to almost zero. X may be