Semiconductor PYQs - Last 10 Years

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Practice 202 JEE Main Physics questions from Semiconductor. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.

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202PYQs

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INTEGER18.3%

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117 in last 5 years202 in last 10 years

Last 10 Years Semiconductor Questions

Showing 50 of 202 filtered questions.

1Electronic Devices

The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6 V. The current through the resister of 40 \(\Omega\) is __________ mA.

INTEGER+4 / -12022

2Electronic Devices

For a transistor to act as a switch, it must be operated in

3Electronic Devices

A logic gate circuit has two inputs A and B and output Y. The voltage waveforms of A, B and Y are shown below.

The logic gate circuit is :

4Electronic Devices

For a constant collector-emitter voltage of \(8 \mathrm{~V}\), the collector current of a transistor reached to the value of \(6 \mathrm{~mA}\) from \(4 \mathrm{~mA}\), whereas base current changed from \(20 \,\mu \mathrm{A}\) to $$25 \,\mu...

5Electronic Devices

As per the given circuit, the value of current through the battery will be ____________ A.

INTEGER+4 / -12022

6Electronic Devices

The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively, is :

7Electronic Devices

The positive feedback is required by an amplifier to act an oscillator. The feedback here means :

8Electronic Devices

In the circuit shown below, maximum zener diode current will be _________ \(\mathrm{mA}\).

INTEGER+4 / -12022

9Electronic Devices

The typical transfer characteristics of a transistor in CE configuration is shown in figure. A load resistor of \(2 \,k \Omega\) is connected in the collector branch of the circuit used. The input resistance of the transistor is $$0.50 \,\m...

INTEGER+4 / -12022

10Electronic Devices

The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :

11Electronic Devices

In an experiment of CE configuration of n-p-n transistor, the transfer characteristics are observed as given in figure.
If the input resistance is 200 \(\Omega\) and output resistance is 60 \(\Omega\), the voltage gain in this experiment wi...

INTEGER+4 / -12022

12Electronic Devices

Identify the logic operation performed by the given circuit:

13Electronic Devices

The energy band gap of semiconducting material to produce violet (wavelength = 4000\(\mathop A\limits^o\) ) LED is ______________ \(\mathrm{eV}\). (Round off to the nearest integer).

INTEGER+4 / -12022

14Electronic Devices

In the circuit, the logical value of \(A=1\) or \(B=1\) when potential at \(A\) or \(B\) is \(5 \mathrm{~V}\) and the logical value of \(A=0\) or \(B=0\) when potential at \(A\) or \(B\) is \(0 \mathrm{~V}\).

The truth table of the given c...

15Electronic Devices

Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between A and B is __________ \(\Omega\).

INTEGER+4 / -12022

16Electronic Devices

A transistor is used in common-emitter mode in an amplifier circuit. When a signal of 10 mV is added to the base-emitter voltage, the base current changes by 10 \(\mu\)A and the collector current changes by 1.5 mA. The load resistance is 5 ...

INTEGER+4 / -12022

17Electronic Devices

In the given circuit, the value of current IL will be ____________ mA. (When RL = 1k\(\Omega\))

INTEGER+4 / -12022

18Electronic Devices

Choose the correct waveform that can represent the voltage across R of the following circuit, assuming the diode is ideal one :

19Electronic Devices

In the following logic circuit the sequence of the inputs A, B are (0, 0), (0, 1), (1, 0) and (1, 1). The output Y for this sequence will be :

20Electronic Devices

Statement - I :To get a steady dc output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load RL.Statement - II :To get a steady dc output from the pulsating voltag...

21Electronic Devices

If VA and VB are the input voltages (either 5V or 0V) and V0 is the output voltage then the two gates represented in the following circuit (A) and (B) are :-

22Electronic Devices

A transistor is connected in common emitter circuit configuration, the collector supply voltage is 10 V and the voltage drop across a resistor of 1000 \(\Omega\) in the collector circuit is 0.6 V. If the current gain factor (\(\beta\)) is 2...

INTEGER+4 / -12021

23Electronic Devices

Find the truth table for the function Y of A and B represented in the following figure.

24Electronic Devices

A circuit is arranged as shown in figure. The output voltage V0 is equal to ................... V.

INTEGER+4 / -12021

25Electronic Devices

For a transistor in CE mode to be used as an amplifier, it must be operated in :

26Electronic Devices

A zener diode of power rating 2W is to be used as a voltage regulator. If the zener diode has a breakdown of 10 V and it has to regulate voltage fluctuated between 6 V and 14 V, the value of Rs for safe operation should be ___________ $$\Om...

INTEGER+4 / -12021

27Electronic Devices

For a transistor \(\alpha\) and \(\beta\) are given as \(\alpha = {{{I_C}} \over {{I_E}}}\) and \(\beta = {{{I_C}} \over {{I_B}}}\). Then the correct relation between \(\alpha\) and \(\beta\) will be :

28Electronic Devices

LED is constructed from Ga-As-P semiconducting material. The energy gap of this LED is 1.9 eV. Calculate the wavelength of light emitted and its colour.[h = 6.63 \(\times\) 10\(-\)34 Js and c = 3 \(\times\) 108 ms\(-\)1]

29Electronic Devices

The circuit contains two diodes each with a forward resistance of 50\(\Omega\) and with infinite reverse resistance. If the battery voltage is 6V, the current through the 120\(\Omega\) resistance is ____________ mA.

INTEGER+4 / -12021

30Electronic Devices

The zener diode has a Vz = 30V. The current passing through the diode for the following circuit is ________ mA.

INTEGER+4 / -12021

31Electronic Devices

Draw the output signal Y in the given combination of gates.

32Electronic Devices

Statement I : By doping silicon semiconductor with pentavalent material, the electrons density increases.Statement II : The n-type semiconductor has net negative charge.In the light of the above statements, choose the most appropriate answe...

33Electronic Devices

Identify the logic operation carried out by the given circuit :-

34Electronic Devices

For the given circuit, the power across Zener diode is .............. mW.

INTEGER+4 / -12021

35Electronic Devices

Four NOR gates are connected as shown in figure. The truth table for the given figure is :

36Electronic Devices

Identify the logic operation carried out.

37Electronic Devices

In a semiconductor, the number density of intrinsic charge carries at 27\(^\circ\)C is 1.5 \(\times\) 1016/m3. If the semiconductor is doped with impurity atom, the hole density increases to 4.5 \(\times\) 1022/m3. The electron density in t...

INTEGER+4 / -12021

38Electronic Devices

A 5V battery is connected across the points X and Y. Assume D1 and D2 to be normal silicon diodes. Find the current supplied by the battery if the +ve terminal of the battery is connected to point X.

39Electronic Devices

The truth table for the following logic circuit is :

40Electronic Devices

For extrinsic semiconductors; when doping level is increased;

41Electronic Devices

In connection with the circuit drawn below, the value of current flowing through 2 k\(\Omega\) resistor is _________ \(\times\) 10\(-\)4 A.

INTEGER+4 / -12021

42Electronic Devices

If an emitter current is changed by 4 mA, the collector current changes by 3.5 mA. The value of \(\beta\) will be :

43Electronic Devices

The logic circuit shown above is equivalent to :

44Electronic Devices

Given below are two statements :Statement I : PN junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal.Statement II : In the study of transistor, the amplificat...

45Electronic Devices

Zener breakdown occurs in a p \(-\) n junction having p and n both :

46Electronic Devices

In a given circuit diagram, a 5 V zener diode along with a series resistance is connected across a 50 V power supply. The minimum value of the resistance required, if the maximum zener current is 90 mA will be __________ \(\Omega\).

INTEGER+4 / -12021

47Electronic Devices

Consider a situation in which reserve biased current of a particular P-N junction increases when it is exposed to a light of wavelength \(\le\) 621 nm. During this process, enhancement in carrier concentration takes place due to generation ...

48Electronic Devices

For the circuit shown below, calculate the value of Iz :

49Electronic Devices

For the forward biased diode characteristics shown in the figure, the dynamic resistance at ID = 3 mA will be __________ \(\Omega\).

INTEGER+4 / -12021

50Electronic Devices

A zener diode having zener voltage 8 V and power dissipation rating of 0.5 W is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of protective resistance Rp i...

INTEGER+4 / -12021