Semiconductor PYQs - Last 10 Years

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PhysicsModern Physics2017-2026

All Semiconductor PYQs Last 5 Years Create chapter test

Practice 202 JEE Main Physics questions from Semiconductor. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.

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Physics / Modern Physics

2017-2026

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117

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2022-2026

202

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2017-2026

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202PYQs

MCQ81.7%

INTEGER18.3%

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#1 Easy142

#2 Medium60

117 in last 5 years202 in last 10 years

Last 10 Years Semiconductor Questions

Showing 50 of 202 filtered questions.

1Electronic Devices

In the given figure, each diode has a forward bias resistance of 30\(\Omega\) and infinite resistance in reverse bias. The current I1 will be :

2Electronic Devices

An npn transistor operates as a common emitter amplifier with a power gain of 106. The input circuit resistance is 100\(\Omega\) and the output load resistance is 10 K\(\Omega\). The common emitter current gain '\(\beta\)' will be ________....

INTEGER+4 / -12021

3Electronic Devices

The correct relation between \(\alpha\) (ratio of collector current to emitter current) and \(\beta\) (ratio of collector current to base current) of a transistor is :

4Electronic Devices

The typical output characteristics curve for a transistor working in the common-emitter configuration is shown in the figure.The estimated current gain from the figure is __________.

INTEGER+4 / -12021

5Electronic Devices

The output of the given combination gates represents :

6Electronic Devices

Which one of the following will be the output of the given circuit?

7Electronic Devices

In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively, the output at Y would be 'x'.The value of x is ____________.

INTEGER+4 / -12021

8Electronic Devices

The value of power dissipated across the zener diode (Vz = 15V) connected in the circuit as shown in the figure is x \(\times\) 10\(-\)1 watt.The value of x, to the nearest integer, is __________.

INTEGER+4 / -12021

9Electronic Devices

The following logic gate is equivalent to :

10Electronic Devices

Both the diodes used in the circuit shown are
assumed to be ideal and have negligible
resistance when these are forward biased. Built
in potential in each diode is 0.7 V. For the input
voltages shown in the figure, the voltage
(in Volts) at...

INTEGER+4 / -02020

11Electronic Devices

The current i in the network is :

12Electronic Devices

Two identical capacitors A and B, charged to
the same potential 5V are connected in two
different circuits as shown below at time t = 0.
If the charge on capacitors A and B at time
t = CR is QA and QB respectively, then (Here
e is the base ...

13Electronic Devices

The circuit shown below is working as a 8 V
dc regulated voltage source. When 12 V is used
as input, the power dissipated (in mW) in each
diode is; (considering both zener diodes are
identical) _________.

INTEGER+4 / -02020

14Electronic Devices

Boolean relation at the output stage-Y for the
following circuit is :

15Electronic Devices

In the given circuit, value of Y is :

16Electronic Devices

Which of the following gives a reversible operation?

17Electronic Devices

In the figure, potential difference between A and B is :

18Electronic Devices

Identify the correct output signal Y in the given combination of gates (as shown) for the given
inputs A and B.

19Electronic Devices

The output characteristics of a transistor is shown in the figure. When VCE is 10V and IC
= 4.0 mA,
then value of \(\beta\)ac
is __________.

INTEGER+4 / -02020

20Electronic Devices

With increasing biasing voltage of a photodiode,
the photocurrent magnitude :

21Electronic Devices

Two Zener diodes (A and B) having breakdown
voltages of 6 V and 4 V respectively, are
connected as shown in the circuit below. The
output voltage V0 variation with input voltage
linearly increasing with time, is given by :
(Vinput = 0 V at ...

22Electronic Devices

Take the breakdown voltage of the zener diode used in the given circuit as 6V. For the input voltage shown in figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to scale)

23Electronic Devices

Identify the operation performed by the circuit given below :

24Electronic Devices

When a diode is forward biased, it has a
voltage drop of 0.5 V. The safe limit of current
through the diode is 10 mA. If a battery of emf
1.5 V is used in the circuit, the value of
minimum resistance to be connected in series
with the diode...

25Electronic Devices

Which of the following will NOT be observed when a multimeter (operating in resistance measuring
mode) probes connected across a component, are just reversed?

26Electronic Devices

If a semiconductor photodiode can detect a photon with a maximum wavelength of 400 nm, then
its band gap energy is :
Planck’s constant h = 6.63 \(\times\) 10–34 J.s. Speed of light c = 3 \(\times\) 108
m/s

27Electronic Devices

In the following digital circuit, what will be the
output at ‘Z’, when the input (A, B) are (1, 0),
(0, 0), (1, 1,), (0, 1)

28Electronic Devices

Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 1019 m\(-\)3 and their mobility is 1.6 m2/(V.s) then the re...

29Electronic Devices

Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V0 changes by : (assume that the Ge diode has large breakdown voltage)

30Electronic Devices

An NPN transistor is used in common emitter
configuration as an amplifier with 1 k\(\Omega\) load
resistance. Signal voltage of 10 mV is applied
across the base-emitter. This produces a 3 mA
change in the collector current and 15μA
change ...

31Electronic Devices

The logic gate equivalent to the given logic
circuit is :-

32Electronic Devices

The reverse breakdown voltage of a Zener
diode is 5.6 V in the given circuit.
The current IZ through the Zener is :

33Electronic Devices

A common emitter amplifier circuit, built using
an npn transistor, is shown in the figure. Its dc
current gain is 250, RC = 1k\(\Omega\) and VCC = 10 V.
What is the minimum base current for VCE to
reach saturation ?

34Electronic Devices

The output of the given logic circuit is :

35Electronic Devices

In the figure, given that VBB supply can vary from 0 to 5.0 V, VCC = 5V, \(\beta\)dc = 200, RB = 100 k\(\Omega\), RC = 1 k\(\Omega\) and VBE = 1.0 V. The minimum base current and the input voltage at which the transistor will go to satur...

36Electronic Devices

The truth table for the circuit given in the fig. is:

37Electronic Devices

The transfer characteristic curve of a transistor, having input and output resistance 100 \(\Omega\) and 100 k\(\Omega\)
respectively is shown in the figure. The voltage and power gain, are respectively:

38Electronic Devices

Figure shows a DC voltage regulator circuit, with a Zener diode of breakdown voltage = 6V. If the
unregulated input voltage varies between 10 V to 16 V, then what is maximum Zener current?

39Electronic Devices

In the given circuit the current through Zener Diode is close to:

40Electronic Devices

The circuit shown below contains two ideal diodes, each with a forward resistance of 50 \(\Omega\). If the battery voltage is 6 V, the current through the 100 \(\Omega\) resistance (in Amperes) is :

41Electronic Devices

To get output 1 at R, for the given logic gate circuit the input values must be

42Electronic Devices

For the circuit shown below, the current through the Zener diode is -

43Electronic Devices

An n-p-n transistor operates as a common emitter
amplifier, with a power gain of 60 dB. The input
circuit resistance is 100\(\Omega\) and the output load
resistance is 10 k\(\Omega\). The common emitter
current gain \(\beta\) is :

44Electronic Devices

The figure represents a voltage regulator circuit using a Zener diode. The breakdown voltage of the Zener
diode is 6 V and the load resistance is, RL = 4k\(\Omega\). The series resistance of the circuit is Ri
= 1 k\(\Omega\). If the
batt...

45Electronic Devices

In the given circuit, the current through zener diode is :

46Electronic Devices

In a common emitter configuration with suitable bias, it is given that \({R_L}\) is the load resistance and \({R_{BE}}\) is small signal dynamic resistance (input side). Then, voltage gain, current gain and power gain are given, respective...

47Electronic Devices

Truth table for the following digital circuit will be :

48Electronic Devices

The reading of the ammeter for a silicon diode in the given circuit
is :

49Electronic Devices

The current gain of a common emitter amplifier is 69. If the emitter current is 7.0 mA, collector current is :

50Electronic Devices

What is the conductivity of a semiconductor sale having electron concentration of \(5 \times {10^{18}}\,\,{m^{ - 3}},\) hole concentration of \(5 \times {10^{19}}\,\,{m^{ - 3}},\) electron mobility of 2.0 m2 V\(-\)1 s-1 and hole mobility o...