Semiconductor Devices and Logic Gates

In the circuit diagram shown in figure, the current through the zener diode is

The truth table for the given logic circuit is

The depletion layer in p-n junction region is caused by

Find the magnitude of current in the given circuit.

An n-p-n transistor can be considered to be equivalent to two diodes connected. The correct figure out of the following is

In common emitter transistor amplifier, load resistance is $6.5 \mathrm{k} \Omega$ and an input resistance is $1.3 \mathrm{k} \Omega$. If the current gain is 78 , the voltage gain is

The combination of NAND gates is shown in figure (I) and (II). For the given inputs, the outputs in both the combinations are respectively.

Which one of the following statements is true? A p-type semiconductor is doped with

The Boolean expression for ' $x-O R$ ' gate $C=(A \oplus B)$ is equal to

The logic circuit in figure is equivalent to

In an NPN transistor $10^{10}$ electrons enter the emitter in $10^{-6} \mathrm{~s}$ and $2 \%$ electrons recombine with holes in base. The current ratios ' $\alpha$ ' and ' $\beta$ ' of a transistor are respectively (nearly)

In semiconductors at room temperature,

The logic gate combination circuit shown in the figure performs the logic function of

The potential barrier in p-n junction diode is due to

The truth table of the following circuit is

If the $\mathrm{p}-\mathrm{n}$ junction diode is unbiased,

The input signal given to C.E. amplifier having a voltage gain of 126 is $V_i=2 \cos \left(12 t+\frac{\pi}{3}\right)$. The corresponding output signal will be

To get the truth table shown from the following logic circuit, the logic gate G should be

The Boolean expression for the given combination of logic gates is

When a small amount of impurity atoms are added to semiconductor, then generally its resistivity

In an extrinsic n-type semiconductor, the free electrons donated by the impurity atoms occupy energy levels in

Two different logic gates giving output ' 1 ' for the inputs $(1,0)$ and then for $(0,1)$ are

For a transistor, current gain $(\beta)=50$. To change the collector current by $350 \mu \mathrm{~A}$, the base current should be changed by

What is the current in the following junction diode circuit?

A p-n junction diode as a rectifier converts

For detecting light intensity we use

A p-n junction diode cannot be used

Following combination of gates is equivalent to

If ' $\mathrm{n}_{\mathrm{c}}$ ' and ' $\mathrm{n}_{\mathrm{h}}$ ' are the number of electrons and number of holes respectively in a semiconductor heavily doped with phosphorous then

Assuming that junction diode is ideal, the current in arrangement shown in figure

For the following digital logic circuit, the correct truth-table is

When n-p-n junction transistor is used as an amplifier in common emitter mode,

What is the output Y in the following circuit, when all the three inputs A, B, C are first 'zero' and then 'one'?

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is

In the block diagram of simple rectifier circuit, from a variable a.c. voltage, constant d.c. voltage is obtained. The correct order of operation is

The logic gate represented by following logic circuit is

In the given circuit, Zener breakdown voltage is 8 V . If power of Zener diode is 1.6 W . The value of $R$ is

In semiconductors at room temperature,

To get the truth table shown, from the following logic circuit, the Gate G should be

A \(5.0 \mathrm{~V}\) stabilized power supply is required to be designed using a \(12 \mathrm{~V}\) DC power supply as input source. The maximum power rating of zener diode is \(2.0 \mathrm{~W}\). The minimum value of resistance $$R_{\mathr...

For an intrinsic semiconductor \(\left(\mathrm{n}_{\mathrm{h}}\right.\) and \(\mathrm{n}_{\mathrm{e}}\) are the number of holes per unit volume and number of electrons per unit volume respectively)

If the frequency of the input voltage is \(50 \mathrm{~Hz}\), applied to a (a) half wave rectifier and (b) full wave rectifier. The output frequency in both cases is respectively

In a transistor, in common emitter configuration, the ratio of power gain to voltage gain is

In the reverse biasing of a p-n junction diode :

In semiconductors at room temperature,

For emission of light, a light emitting diode (LED) is

For a common emitter configuration, if '\(\alpha\)' and '\(\beta\)' have their usual meanings, the incorrect relation between '\(\alpha\)' and '\(\beta\)' is

When the conductivity of a semiconductor is only due to the breaking of the covalent bonds, the semiconductor is called

In an n-p-n transistor, the collector current is \(28 \mathrm{~mA}\). If \(80 \%\) of electrons reach the collector, its base current in \(\mathrm{mA}\) is

The output of following combination is same as that of