Semiconductor Devices and Logic Gates PYQs - Last 10 Years

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Practice 57 TS EAMCET Physics questions from Semiconductor Devices and Logic Gates. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.

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Last 10 Years Semiconductor Devices and Logic Gates Questions

Showing 50 of 57 filtered questions.

1Semiconductor Devices And Logic Gates

Three logic gates are connected as shown in the figure. If the inputs are $A=1, B=0$ and $C=1$, then the values of $y_1, y_2$ and $y_3$ respectively are

2Semiconductor Devices And Logic Gates

At absolute zero temperature, a semiconductor behaves like

3Semiconductor Devices And Logic Gates

The negative feedback in an amplifier

4Semiconductor Devices And Logic Gates

The current amplification factor of a transistor in common emitter configuration is 80 . If the emitter current is 2.43 mA , then the base current is

5Semiconductor Devices And Logic Gates

If the energy gap of a semiconductor used for the fabrication of an LED is nearly 1.9 eV , then the color of the light emitted by the LED is

6Semiconductor Devices And Logic Gates

According to a graph drawn between the input and output voltages of a transistor connected in common emitter configuration, the region in which transistor acts as a switch is

7Semiconductor Devices And Logic Gates

The graph between the input voltage $\left(V_i\right)$ and the output voltage ( $V_o$ ) of a transistor connected in common emitter configuration is shown in the figure. The active, saturation and cutoff regions of the transistor are respec...

8Semiconductor Devices And Logic Gates

Which of the following logic gates is a universal gate?

9Semiconductor Devices And Logic Gates

Six logic gates are connected as shown in the figure. The values of $y_1, y_2$ and $y_3$ respectively are

10Semiconductor Devices And Logic Gates

The power gain and voltage gain of a transistor connected in common emitter configuration are 1800 and 60 respectively. If the change in the emitter current is 0.62 mA , then the change in the collector current is

11Semiconductor Devices And Logic Gates

An electron in $n$-region of a $p-n$ junction moves towards the junction with a speed of $5 \times 10^5 \mathrm{~ms}^{-1}$. If the barrier potential of the junction is 0.45 V , then the speed with which the electron enters the $p$-region af...

12Semiconductor Devices And Logic Gates

$10^{10}$ electrons enter the emitter of a junction transistor in a time of $0.4 \mu \mathrm{~s}$. If $5 \%$ of the electrons are lost in the base, then the collector current is

13Semiconductor Devices And Logic Gates

Three logic gates are connected as shown in the figure. If the inputs are $A=1$ and $B=1$, then the values of $Y_1$ and $Y_2$ respectively are

14Semiconductor Devices And Logic Gates

The concentration of electrons in an intrinsic semiconductor is $6 \times 10^{15} \mathrm{~m}^{-3}$. On doping with an impurity, the electron concentration increases to $4 \times 10^{22} \mathrm{~m}^{-3}$. In thermal equilibrium, the concen...

15Semiconductor Devices And Logic Gates

A zener diode of zener voltage 30 V is connected in circuit as shown in the figure. The maximum current through the zener diode is

16Semiconductor Devices And Logic Gates

Two logic gates are connected as shown in the figure. If the inputs are $A=1$ and $B=0$, then the values of $Y_1$ and $Y_2$ respectively are

17Semiconductor Devices And Logic Gates

To get output 1 for the following logic circuit, the correct choice of the inputs is

18Semiconductor Devices And Logic Gates

Match the devices given in List-I with their uses given in List-II. .tg {border-collapse:collapse;border-spacing:0;} .tg td{border-color:black;border-style:solid;border-width:1px;font-family:Arial, sans-serif;font-size:14px; overflow:hi...

19Semiconductor Devices And Logic Gates

Normally a capacitor is connected across the output terminals of a rectifier to

20Semiconductor Devices And Logic Gates

The voltage gain of a transistor in common emitter configuration is 160 . The resistances in base and collector sides of the circuit are $1 \mathrm{k} \Omega$ and $4 \mathrm{k} \Omega$ respectively. If the change in base current is $100 \mu...

21Semiconductor Devices And Logic Gates

In an $n$-type semiconductor, electrons are majority charge carriers and holes are minority charge carriers. The charge of an $n$-type semiconductor is

22Semiconductor Devices And Logic Gates

The region in the output voltage versus input voltage graph where a transistor can be used as an amplifier is

23Semiconductor Devices And Logic Gates

Which of the following statements is true about LEDs?

24Semiconductor Devices And Logic Gates

Photodiodes are mostly operated in reverse biased condition because

25Semiconductor Devices And Logic Gates

5 logic gates are connected as shown in the figure. If $A$ and $B$ are the inputs, $Y$ is the output then the truth table of the circuit is

26Semiconductor Devices And Logic Gates

When an $n$-type semiconductor is heated

27Semiconductor Devices And Logic Gates

The phase difference between the input voltage and the output voltage in a common emitter amplifier is

28Semiconductor Devices And Logic Gates

The built-in potential of a $p-n$ junction diode is 0.7 V . If the diode is forward biased and the applied voltage is 0.3 V , the effective barrier height is

29Semiconductor Devices And Logic Gates

In the logic circuit given below, if $X=1$ and $Y=1$, then the values of $P, Q$ and $R$ are

30Semiconductor Devices And Logic Gates

The symbol given below represents

31Semiconductor Devices And Logic Gates

If the output of a NAND gate is given as input to a NOT gate, the resultant gate is

32Semiconductor Devices And Logic Gates

In a transistor, the base current is $10 \mu \mathrm{~A}$ and the emitter current is 1 mA , then the collector current is

33Semiconductor Devices And Logic Gates

When a semiconductor is doped with donor impurity

34Semiconductor Devices And Logic Gates

If the ratio of electron and hole currents in a semiconductor is $7 / 4$ and the ratio of drift velocities of electrons and holes is $5 / 4$, then ratio of concentrations of electrons and holes will be

35Semiconductor Devices And Logic Gates

Identify the logic operation performed by the following circuit.

36Semiconductor Devices And Logic Gates

A $p-n$ junction is fabricated from a semiconductor with band gap of 2.8 eV . what approximate wavelength it cannot detect? [Use, $h=6 \times 10^{-34} \mathrm{~m}^2 \mathrm{~kg} / \mathrm{s}$ ]

37Semiconductor Devices And Logic Gates

Identify the logic gate from the following with the same truth table characteristics of the logic circuit below

38Semiconductor Devices And Logic Gates

The band gap in a semiconductor is 0.6 eV . The maximum wavelength of electromagnetic radiation which can create a hole electron pair in the semiconductor is equal to
[use $h c=1242 \mathrm{eV}-\mathrm{nm}$ ]

39Semiconductor Devices And Logic Gates

For an $n-p-n$ transistor structure, which of the following statements is not true?

40Semiconductor Devices And Logic Gates

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given to be $I=I_0\left(e^{\frac{V}{2 V_T}}-1\right)$, where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction, then $r...

41Semiconductor Devices And Logic Gates

The output of the following circuit is equivalent to $.......$ gate

42Semiconductor Devices And Logic Gates

The number of silicon atoms per $\mathrm{m}^3$ is $5 \times 10^{28}$. This is doped with $4.5 \times 10^{21}$ atoms $/ \mathrm{m}^3$ of arsenic. The ratio of number of electrons to number of holes after doping is (take $n_i=$ number of ther...

43Semiconductor Devices And Logic Gates

In a NAND gate, $A$ and $B$ are inputs and $Y$ is the output, then the correct option is

44Semiconductor Devices And Logic Gates

In a $p$-type semiconductor, which of the following statements is true?

45Semiconductor Devices And Logic Gates

The behaviour of the circuit is like $\_\_\_\_$ gate

46Semiconductor Devices And Logic Gates

In a $p-n-p$ transistor, the current carriers are

47Semiconductor Devices And Logic Gates

The current gain of a transistor is 0.98 . If the transistor is used in a common emitter arrangement what would be the change in collector current corresponding to a change of 0.5 mA in the base current?

48Semiconductor Devices And Logic Gates

Which of the following circuits satisfies the logic condition $A=1, B=1$ and $D=1$ ?

49Semiconductor Devices And Logic Gates

In an $n-p-n$ transistor, $95 \%$ of emitted electrons reach the collector. If the base current is 2 mA , then collector current is

50Semiconductor Devices And Logic Gates

In a Zener diode,