Semiconductor Electronics

Three identical p-n junction diodes $D_1, D_2$, and $D_3$ are connected across a battery as shown in the figure. If the width of the depletion regions of $D_1, D_2$ and $D_3$ are $W_1, W_2$ and $W_3$, respectively, then the correct option i...

An ideal Zener diode with breakdown voltage of -3 V is reverse biased with a negative input voltage $V_i=-5 \mathrm{~V}$. The magnitude of voltage difference between point $B$ and $A$ is:

Two statements are given below:
A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly.
B. This current is called reverse saturation current.
Choos...

\(\text { In the circuit shown below, the voltage appearing across the diode } D \text { will be of the form: }\)

The current / in the circuit shown below is: (All diodes are ideal and identical)

A full wave rectifier circuit with diodes $\left(D_1\right)$ and $\left(D_2\right)$ is shown in the figure. If input supply voltage $\mathrm{V}_{\text {in }}=220 \sin (100 \pi t)$ volt, then at $t=15 \mathrm{msec}$

The output ( $Y$ ) of the given logic implementation is similar to the output of an/a ________ gate.

The output Y for the inputs A and B of the given logic circuit is:

The I-V characteristics shown above are exhibited by a

When the output of an OR gate is applied as input to a NOT gate, then the combination acts as a

Consider the following statements A and B and identify the correct answer :

A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased \(p n\) junction diode, the current measured in $$(...

A logic circuit provides the output \(Y\) as per the following truth table :

The expression of the output Y is :

\(\text { The output ( } Y \text { ) of the given logic gate is similar to the output of an/a }\)

The above figure shows the circuit symbol of a transistor. Select the correct statements given below:
(A) The transistor has two segments of p-type semiconductor separated by a segment of n-type semiconductor.
(B) The emitter is of moderat...

A p-type extrinsic semiconductor is obtained when Germanium is doped with:

The given circuit is equivalent to:

On the basis of electrical conductivity, which one of the following material has the smallest resistivity?

For the following logic circuit, the truth table is:

A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?

Given below are two statements:
Statement I : Photovoltaic devices can convert optical radiation into electricity.
Statement II : Zener diode is designed to operate under reverse bias in breakdown region.
In the light of the above statement...

The collector current in a common base amplifier using n-p-n transistor is 24 mA. If 80% of the electrons released by the emitter is accepted by the collector, then the base current is numerically :

The incorrect statement about the property of a Zener diode is :

Identify the equivalent logic gate represented by the given circuit

The truth table for the given logic circuit is

In half wave rectification, if the input frequency is 60 Hz, then the output frequency would be

As the temperature increases, the electrical resistance

In the given circuits (a), (b) and (c), the potential drop across the two p-n junctions are equal in

For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at the terminal y?

The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

Consider the following statements (A) and (B) and identify the correct answer.(A) A Zener diode is connected in reverse bias, when used as a voltage regulator.(B) The potential barrier of p-n junction lies between 0.1 V to 0.3 V.

The increase in the width of the depletion region in a p-n junction diode is due to :

For transistor action, which of the following statements is correct?

For the logic circuit shown, the truth table is :

For a p-type semiconductor, which of the following statements is true?

The correct Boolean operation represented by the circuit diagram drawn is :

In the combination of the following gates
the output Y can be written in terms of inputs
A and B as

In the circuit shown in the figure, the input
voltage Vi
is 20 V, VBE = 0 and VCE = 0. The
values of IB
, IC
and \(\beta\) are given by

In a p-n junction diode, change in temperature
due to heating

In a common emitter transistor amplifier the audio sgnal voltage across the collector is 3 V. The resistance of collector is 3 k\(\Omega\). If current gain is 100 and the base resistance is 2 k\(\Omega\), the voltage and power gain of the...

Which one of the following represents forward bias diode ?

The given electrical network is equivalent to

The given circuit has two ideal diodes connected as shown in the figure. The current flowing through the resistance R1 will be

What is the output Y in the following circuit, when all the three inputs A, B, C are first 0 and then 1 ?

For CE transistor amplifier, the aufio signal voltage across the collector resistance of 2 k\(\Omega\) is 4 V. If the current amplification factor of the transistor is 100 and the base resistance is 1 k\(\Omega\), then the input signal vo...

Consider the junction diode as ideal. The value of current flowing through AB is

A npn transistor is connected in common emitter configuration in a given amplifier. A load resistance of 800 \(\Omega\) is connected in the collector circuit and the voltage frop across it is 0.8 V. If the current amplification factor is 0...

To get output 1 for the following circuit, the correct choice for the input is

Which logic gate is represented by the following combination of logic gates ?

If in a p-n junction, a square input signal of 10 V is applied, as shown,

then the output across RL will be

In the given figure, a diode D is connected to an external resistance R = 100 \(\Omega\) and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the citcuit will be