Semiconductor Electronics
NEET / Physics / Modern Physics / 119 questions
PhysicsModern Physics119 PYQs
Practice 119 NEET Physics questions from Semiconductor Electronics. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.
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2000-2026
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Semiconductor Electronics Questions
Showing 50 of 119 questions on this page.
1Semiconductor Electronics
The input signal given to a CE amplifier having a voltage gain of 150 is Vi = 2cos(15t + \({\pi \over 3}\)). The corresponding output signal will be
MCQ+4 / -12015
2Semiconductor Electronics
The barrier potential of a p-n junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct ?
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct ?
MCQ+4 / -12014
3Semiconductor Electronics
The given graph represents V-I characteristic for a semiconductor device.
Which of the following statement is correct ?
Which of the following statement is correct ?
MCQ+4 / -12014
4Semiconductor Electronics
The output from a NAND gate is divided into two in parallel and fed to another NAND gate. The resulting gate is a
MCQ+4 / -12013
5Semiconductor Electronics
One way in which the operation of a n-p-n transistor differs from that of a p-n-p
MCQ+4 / -12013
6Semiconductor Electronics
In an unbiased p-n junction, holes diffuse from the p-region to n-region because of
MCQ+4 / -12013
7Semiconductor Electronics
In a n-type semiconductor, which of the following statement is true.
MCQ+4 / -12013
8Semiconductor Electronics
In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with transconductance 0.02 mho and current gain 20, the ...
MCQ+4 / -12013
9Semiconductor Electronics
The output (X) of the logic circuit shown ion figure will be
MCQ+4 / -12013
10Semiconductor Electronics
In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2 k\(\Omega\) is 2 V. If the base resistance is 1 k\(\Omega\) and the current amplification of the transistor is 100, the input signal voltage is
MCQ+4 / -12012
11Semiconductor Electronics
The figure shows a logic circuit with two inputs A and B and the output C. The voltage wave forms across A, B and C are as given. The logic circuit gate is
MCQ+4 / -12012
12Semiconductor Electronics
Transfer characteristics [output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used
MCQ+4 / -12012
13Semiconductor Electronics
C and Si both have same lattice structure; having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because
MCQ+4 / -12012
14Semiconductor Electronics
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is
MCQ+4 / -12012
15Semiconductor Electronics
The input resistance of a silicon transistor is 100 \(\Omega\). Base current is changed by 40 \(\mu\)A which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of...
MCQ+4 / -12012
16Semiconductor Electronics
To get an output Y= 1 in given circuit which of the following input will be correct ?
MCQ+4 / -12012
17Semiconductor Electronics
If a small amount of antimony is added to germanium crystal
MCQ+4 / -12011
18Semiconductor Electronics
In forward biasing of the p-n junction
MCQ+4 / -12011
19Semiconductor Electronics
Symbolic representation of four logic gates are shown as
Pick out which ones are for AND, NAND and NOT gates, respectively
Pick out which ones are for AND, NAND and NOT gates, respectively
MCQ+4 / -12011
20Semiconductor Electronics
A transistor is operated in common emitter configuration at VC = 2 V such that a change in the base current from 100 \(\mu\)A to 300 \(\mu\)A produces a change in the collector current from 10 mA to 20 mA. The current gain is
MCQ+4 / -12011
21Semiconductor Electronics
In the following figure, the diodes which are forward biased, are
MCQ+4 / -12011
22Semiconductor Electronics
Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 \(\times\) 1016 m\(-\)3. Doping by indium increases nh to 4.5 \(\times\) 1022 m\(-\)3. The doped semiconductor is of
MCQ+4 / -12011
23Semiconductor Electronics
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is
MCQ+4 / -12011
24Semiconductor Electronics
Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has high melting point ?
MCQ+4 / -12010
25Semiconductor Electronics
The device that can act as a complete electronic circuit is
MCQ+4 / -12010
26Semiconductor Electronics
Which one of the following statement is false ?
MCQ+4 / -12010
27Semiconductor Electronics
A common emitter amplifier has a voltage gain of 50, an input impedance of 100 \(\Omega\) and an output impedance of 200 \(\Omega\). The power gain of the amplifier is
MCQ+4 / -12010
28Semiconductor Electronics
To get an output Y = 1 in given circuit which of the following input will be correct ?
MCQ+4 / -12010
29Semiconductor Electronics
For transistor action
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vety thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collecto...
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vety thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collecto...
MCQ+4 / -12010
30Semiconductor Electronics
The following figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are as given.
The logic gate is
The logic gate is
MCQ+4 / -12010
31Semiconductor Electronics
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength
MCQ+4 / -12009
32Semiconductor Electronics
A transistor is operated in common-emitter configuration at VC = 2V such that a change in the base current from 100 \(\mu\)A to 200 \(\mu\)A produces a change in the collector current from 5 mA to 10 mA. The current gain is
MCQ+4 / -12009
33Semiconductor Electronics
The symbolic representation of four logic gates are given below
The logic symbols for OR, NOT and NAND gates are respectively
The logic symbols for OR, NOT and NAND gates are respectively
MCQ+4 / -12009
34Semiconductor Electronics
Sodium has body centred packing. Distance between two nearest atoms is 3.7 \(\mathop A\limits^ \circ\). The lattice parameter is
MCQ+4 / -12009
35Semiconductor Electronics
If the lattice parameter for a crystalline structure is 3.6 \(\mathop A\limits^ \circ\), then the atomic radius in fcc crystal is
MCQ+4 / -12008
36Semiconductor Electronics
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
MCQ+4 / -12008
37Semiconductor Electronics
The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be
MCQ+4 / -12008
38Semiconductor Electronics
For a cubic crystal structure which one of the following relations indicating the cell characteristics is correct ?
MCQ+4 / -12007
39Semiconductor Electronics
In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table.
MCQ+4 / -12007
40Semiconductor Electronics
Which one of the following represents forward bias diode ?
MCQ+4 / -12007
41Semiconductor Electronics
In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is
MCQ+4 / -12007
42Semiconductor Electronics
The following figure shows a logic gate circuit with two inputs A and B and the output C.
The voltage waveforms of A, B and C are as shown below.
The logic circuit gate is
The voltage waveforms of A, B and C are as shown below.
The logic circuit gate is
MCQ+4 / -12006
43Semiconductor Electronics
Which one of the following represents forward bias diode ?
MCQ+4 / -12006
44Semiconductor Electronics
A transistor is operated in common emitter configuration at constant collector voltage VC = 1.5 V such that a change in the base current from 100 \(\mu\)A to 150 \(\mu\)A profuces a change in the collector current from 5 mA to 10 mA. The ...
MCQ+4 / -12006
45Semiconductor Electronics
Choose the only false statement from the following.
MCQ+4 / -12005
46Semiconductor Electronics
Copper has face centered cubic (fcc) lattice with interatomic spacing equal to 2.54 \(\mathop A\limits^ \circ\). The value of lattice constant for this lattice is
MCQ+4 / -12005
47Semiconductor Electronics
In a p-n junction photo cell, the value of the photo-electromotive force profuced by monochromatic light is proportional to
MCQ+4 / -12005
48Semiconductor Electronics
Application of a forward bias to a p-n junction
MCQ+4 / -12005
49Semiconductor Electronics
Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)si and (Eg)Ge respectively. Which one of the following relationships is tr...
MCQ+4 / -12005
50Semiconductor Electronics
Zener diode is used for
MCQ+4 / -12005
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