Semiconductor Devices and Logic Gates

The order of (a) transformer (b) diode rectifier (c) filter (d) voltage regulator in a block diagram of simple rectifier circuit is as
(a) b, d, c, a
(b) a, c, d, b
(c) a, b, c, d
(d) d, c, a, b

In common emitter configuration, $\beta, \mathrm{R}_{\mathrm{L}}$ and r are the a.c. current gain, load resistance and the input resistance of a transistor respectively. The voltage and power gain respectively are

When forward bias is applied to a p-n junction, then the potential barrier and the width of the depletion region respectively.

The output Y of a given logic circuit is (For inputs $\mathrm{A}, \mathrm{B}$ and C )

For a p-type semiconductor, the relation between the number density ' $\mathrm{n}_{\mathrm{h}}$ ' and ' $\mathrm{n}_{\mathrm{e}}$ ' is

The main difference in the working of a step-up transformer and CE amplifier is

Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?

The Boolean expression for $\mathrm{X}-\mathrm{OR}$ gate $C=(A \oplus B)$ is equivalent to

For a common emitter transistor configuration the ratio of $\frac{\mathrm{I}_{\mathrm{C}}}{\mathrm{I}_{\mathrm{E}}}=0.96$, then the current gain in this configuration is

To get an output $\mathrm{Y}=1$ in the given logic circuit, the correct choice for the input is

For a transistor, the current amplification factor ' $\alpha$ ' is 0.8 . The transistor is then connected in common emitter configuration. The change in the collector current when the base current changes by 6 mA is

By increasing the temperature, the electrical conductivity of a conductor and a semiconductor,