Semiconductor Devices and Logic Gates PYQs - Last 10 Years

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Practice 32 KCET Physics questions from Semiconductor Devices and Logic Gates. Use the year-wise and type-wise breakdown to prioritize recent PYQs, then continue into the question list below.

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Last 10 Years Semiconductor Devices and Logic Gates Questions

Showing 32 of 32 filtered questions.

1Semiconductor Devices And Logic Gates

An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with

2Semiconductor Devices And Logic Gates

In which of the following figures, diode is reverse biased?

3Semiconductor Devices And Logic Gates

A wafer of pure germanium crystal has two parts X and Y. The end X is obtained by doping with arsenic and Y with indium. It is connected to a battery as shown in the figure. Which of the following statements is correct?

4Semiconductor Devices And Logic Gates

The circuit shown in figure contains two ideal diodes $D_1$ and $D_2$. If a cell of emf $3 V$ and negligible internal resistance is connected as shown, then the current through $70 \Omega$ resistance, (in ampere) is

5Semiconductor Devices And Logic Gates

Which of the following statements is correct for an n-type semiconductor?

6Semiconductor Devices And Logic Gates

A $p-n$ junction diode is connected to a battery of emf 5.7 V in series with a resistant $5 \mathrm{k} \Omega$ such that it is forward biased. If the barrier potential of the diode is 0.7 V , neglecting the diode resistance, the current in ...

7Semiconductor Devices And Logic Gates

In the diagram shown, the Zener diode has a reverse breakdown voltage of $V_Z$. The current through the load resistance $R_L$ is $I_L$. The current through the Zener diode is

8Semiconductor Devices And Logic Gates

The upper level of valence band and lower level of conduction band overlap in the case of

9Semiconductor Devices And Logic Gates

Depletion region in an unbiased semiconductor diode is a region consisting of
only free electrons
only holes

10Semiconductor Devices And Logic Gates

A truth table for the given circuit is

11Semiconductor Devices And Logic Gates

A full-wave rectifier with diodes \(D_1\) and \(D_2\) is used to rectify \(50 \mathrm{~Hz}\) alternating voltage. The diode \(D_1\) conducts ......... times in one second.

12Semiconductor Devices And Logic Gates

When a \(p\)-\(n\) junction diode is in forward bias, which type of charge carriers flows in the connecting wire?

13Semiconductor Devices And Logic Gates

Which logic gate is represented by the following combination of logic gates?

14Semiconductor Devices And Logic Gates

The forbidden energy gap for Ge crystal at 0K is

15Semiconductor Devices And Logic Gates

The resistivity of a semiconductor at room temperature is in between

16Semiconductor Devices And Logic Gates

The circuit given represents which of the logic operations?

17Semiconductor Devices And Logic Gates

Three photodiodes \(D_1, D_2\) and \(D_3\) are made of semiconductors having band gaps of \(2.5 \mathrm{~eV}, 2 \mathrm{~eV}\) and \(3 \mathrm{~eV}\), respectively. Which one will be able to detect light of wavelength \(600 \mathrm{~nm}\) ?

18Semiconductor Devices And Logic Gates

Identify the incorrect statement.

19Semiconductor Devices And Logic Gates

In the following circuit what are P and Q

20Semiconductor Devices And Logic Gates

A positive hole in a semiconductor is

21Semiconductor Devices And Logic Gates

In the following circuit, what are P and Q?

22Semiconductor Devices And Logic Gates

For a transistor amplifier, the voltage gain

23Semiconductor Devices And Logic Gates

The conductivity of semiconductor increases with increase in temperature because

24Semiconductor Devices And Logic Gates

If $A=1$ and $B=0$, then in terms of Boolean algebra, $A+\bar{B}=$

25Semiconductor Devices And Logic Gates

The DC common emitter current gain of an $n-p-n$ transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is, $V_{C E}=2 \mathrm{~V}$. If the collector resistance $R_C=4 \...

26Semiconductor Devices And Logic Gates

In a CE amplifier, the input AC signal to be amplified is applied across

27Semiconductor Devices And Logic Gates

The density of electron-hole pair in a pure germanium is $3 \times 10^{16} \mathrm{~m}^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5 \times 10^{22} \mathrm{~m}^{-3}$. Now, the electron density (in $...

28Semiconductor Devices And Logic Gates

Which of the following logic gate is universal gate

29Semiconductor Devices And Logic Gates

In the figure shown, if the diode forward voltage drop is 0.2 V , the voltage difference between $A$ and $B$ is

30Semiconductor Devices And Logic Gates

Which of the following semi-conducting device is used as voltage regulator?

31Semiconductor Devices And Logic Gates

In the three parts of a transistor, 'Emitter' is of

32Semiconductor Devices And Logic Gates

The energy gap in case of which of the following is less than 3 eV ?