Semiconductor Devices And Logic Gates

The DC common emitter current gain of an $n-p-n$ transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is, $V_{C E}=2 \mathrm{~V}$. If the collector resistance $R_C=4 \mathrm{k} \Omega$, the base current $\left(I_B\right)$ and the collector current $\left(I_C\right)$ are