Semiconductor Devices and Logic Gates PYQs - Last 5 Years

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Last 5 Years Semiconductor Devices and Logic Gates Questions

Showing 34 of 34 filtered questions.

1Semiconductor Devices And Logic Gates

In the circuit given, the reverse breakdown voltage of the Zener diode is 4.8 V . The current through the Zener and the power dissipation in Zener is:

2Semiconductor Devices And Logic Gates

A silicon sample is doped simultaneously with donor impurity phosphorus at a concentration of $N_D=3 \times 10^{22} \mathrm{~m}^{-3}$ and acceptor impurity boron at a concentration of $N_D=2.8 \times 10^{22} \mathrm{~m}^{-3}$. The intrinsic...

3Semiconductor Devices And Logic Gates

In a PN junction diode, the forward bias is increased gradually from 0 Volt to 1 Volt. Which of the following statements is correct?
A. The depletion width increases, and barrier potential increases
B. The depletion width decreases, but the...

4Semiconductor Devices And Logic Gates

Find the current through the $40 \Omega$ resistor in the given circuit having a diode, three resistors and two cells.

5Semiconductor Devices And Logic Gates

What is the minimum wavelength of radiation required to detect a p-n junction diode made of a semiconductor having band gap 3.3 eV .
[Planck's constant $h=6.6 \times 10^{34} \mathrm{~J} . \mathrm{s}$ ]

6Semiconductor Devices And Logic Gates

Pick out the correct statement from the following;

7Semiconductor Devices And Logic Gates

In the energy band diagram of a material shown below, open circles and filled circles denote holes and electrons respectively. The material is a

8Semiconductor Devices And Logic Gates

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $1.24 \mu \mathrm{~m}$ is incident on it. The band gap (in eV ) for the semiconductor is

9Semiconductor Devices And Logic Gates

A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. On applying identical reverse bias across these diodes,

10Semiconductor Devices And Logic Gates

The zener voltage in the circuit shown is $\mathrm{V}_{\mathrm{Z}}=20 \mathrm{~V}$. The load resistance $\mathrm{R}_{\mathrm{L}}=5 \mathrm{k} \Omega$ and the resistance $\mathrm{R}_{\mathrm{S}}=10 \mathrm{k} \Omega$. If the input voltage is...

11Semiconductor Devices And Logic Gates

An intrinsic semiconductor has equal concentrations of hole and electron which is equal to $4 \times 10^8 \mathrm{~m}^{-3}$. During its conversion to extrinsic semiconductor, concentration of hole increases to $8 \times 10^{10} \mathrm{~m}^...

12Semiconductor Devices And Logic Gates

What is the dc component of the output voltage if a sinusoidal signal of 33 V peak voltage is the input of a half wave diode rectifier circuit?

13Semiconductor Devices And Logic Gates

Three ideal diodes and resistors connected to the cell of negligible internal resistance is as shown. Find the current passing through the $10 \Omega$ resistor.

14Semiconductor Devices And Logic Gates

Diamond is considered as an insulator because

15Semiconductor Devices And Logic Gates

What is the maximum wave length of EM radiation required to move an electron from the valance band to conduction band of a semiconductor? [Given :Energy gap $\mathrm{E}_{\mathrm{g}}=1.98 \times 10^{-19} \mathrm{~J}$; Planck's constant $h=6....

16Semiconductor Devices And Logic Gates

An ideal diode is connected in series with a capacitor. The free ends of the capacitor and the diode are connected across a \(220 \mathrm{~V}\) ac source. Now the potential difference across the capacitor is :

17Semiconductor Devices And Logic Gates

Though \(\mathrm{Sn}\) and \(\mathrm{Si}\) are \(4^{\text {th }}\) group elements, \(\mathrm{Sn}\) is a metal while \(\mathrm{Si}\) is a semiconductor because

18Semiconductor Devices And Logic Gates

In a given semiconductor, the ratio of the number density of electron to number density of hole is \(2: 1\). If \(\frac{1}{7}\)th of the total current is due to the hole and the remaining is due to the electrons, the ratio of the drift velo...

19Semiconductor Devices And Logic Gates

The following are the graphs of potential barrier versus width of the depletion region for a p-n junction diode.

Which of the following is correct?

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.tg td{border-color:black;border-style:s...

20Semiconductor Devices And Logic Gates

The output of the given circuit is
A. Negatively rectified half wave
B. Positively rectified half wave
C. Negatively rectified full wave
D. Zero all times

21Semiconductor Devices And Logic Gates

The conductivity of a semiconductor increases with increase in temperature because
A) number density of free current carriers increases
B) relaxation time increases
C) both number density of carriers and relaxation time increase
D) number d...

22Semiconductor Devices And Logic Gates

\(\text { In a p-n junction, the depletion layer of thickness } 1 \mu \mathrm{m} \text { has } 0.05 \mathrm{~V} \text { potential across it. The electric field in } N C^{-1} \text { is }\)

23Semiconductor Devices And Logic Gates

A semiconductor \(\mathrm{X}\) is made by doping silicon with phosphorous. A second semiconductor \(\mathrm{Y}\) is made by doping silicon with aluminium. The two are joined by a suitable technique to form a \(\mathrm{p}\)-\(\mathrm{n}\) ju...

24Semiconductor Devices And Logic Gates

In intrinsic semiconductors at room temperature, number of electrons and holes are

25Semiconductor Devices And Logic Gates

The mobility of the charge carriers increases with

26Semiconductor Devices And Logic Gates

In the given circuit the diode \(D_1\) and \(D_2\) have the forward resistance \(25 \Omega\) and infinite backward resistance. When they are connected to the source as shown, the current passing through the \(175 \Omega\) resistor is:

27Semiconductor Devices And Logic Gates

The reverse current in the semiconductor diode changes from \(20 \mu \mathrm{A}\) to \(40 \mu \mathrm{A}\) when the reverse potential is changed from \(10 \mathrm{~V}\) to \(15 \mathrm{~V}\), then the reverse resistance of the junction diod...

28Semiconductor Devices And Logic Gates

The energy gap between valance band and the conduction band for a given material is \(6 \mathrm{~eV}\), then the material is :

29Semiconductor Devices And Logic Gates

An LED is constructed from a \(p\)-\(n\) junction diode using GaAsP. The energy gap is \(1.9 \mathrm{~eV}\). The wavelength of the light emitted will be equal to

30Semiconductor Devices And Logic Gates

Which logic gate is represented by the following combination logic gates?

31Semiconductor Devices And Logic Gates

A transistor is connected in CE configuration. The collector supply is \(10 \mathrm{~V}\) and the voltage drop across a resistor of \(1000 \Omega\) in the collector circuit is \(0.5 \mathrm{~V}\). If the current gain factor is 0.96 , then t...

32Semiconductor Devices And Logic Gates

Choose the incorrect statements.

33Semiconductor Devices And Logic Gates

Which of the following gate give the similar output as the output of circuit diagram shown in the figure?

34Semiconductor Devices And Logic Gates

For CE transistor amplifier, the audio signal voltage across the collector resistance of 4 k\(\Omega\) is 5 V. If the current amplification factor of the transistor is 100 and base resistance is 2 k\(\Omega\), then input signal voltage is