Semiconductor Devices And Logic Gates

A silicon sample is doped simultaneously with donor impurity phosphorus at a concentration of $N_D=3 \times 10^{22} \mathrm{~m}^{-3}$ and acceptor impurity boron at a concentration of $N_D=2.8 \times 10^{22} \mathrm{~m}^{-3}$. The intrinsic carrier concentration of silicon at room temperature is $n_i=1.5 \times 10^{16} \mathrm{~m}^{-3}$. Assuming complete ionization, the hole concentration is :